Research on the Switching Characteristics Based on the SiC MOSFET Model
School of Electrical and Information Engineering, Jiangsu University of Technology, Changzhou 213001, China
| Abstract: | With the continuous development of power electronics technology, the third-generation semiconductor materials represented by SiC and GaN have significant advantages in the band gap width, breakdown electric field, thermal conductivity, electron saturation rate and other key parameters, which meet the needs of modern industry for high power, high voltage and high frequency. When the SiC MOSFET plays its high frequency advantage, with the increase of switching frequency, the voltage change rate and current change rate of the device will be larger in the process of turning on and off. This paper mainly analyzes the characteristics of SiC MOSFET devices, and modifies the model based on the model provided by the manufacturer. By establishing static and dynamic test circuits, the static characteristic curves of the model were observed, and the drain voltage and current waveforms of the original model and the optimized model were compared during the switching process. The results show that the switching time of the optimized model is improved, and the oscillation waveform is greatly improved. Then, the accuracy of the optimized model is verified by the double-pulse circuit, and the drain source voltage and the drain source current are studied and observed under different temperature and drive resistance conditions. This paper provides data support for improving the switching characteristics of SiC MOSFET in practical applications. |
| Keywords: | SiC MOSFET; Circuit Simulation; Switching Characteristic; LTspice |
| DOI: | 10.57237/j.se.2023.01.004 |
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Received: 27 November 2022
Accepted: 16 January 2023
Published Online: 3 February 2023
Funding
| 1. | 江苏省研究生实践创新计划项目《新能源汽车充电桩SiC MOSFET仿真及实验研究》 (SJCX22_1479). |
References
| [1] | 麦玉冰, 谢欣荣. 第三代半导体材料碳化硅 (SiC) 研究进展 [J]. 广东化工, 2021, 48 (09): 151-152+155. |
| [2] | Srdic S, Zhang C, Liang X, et al. A SiC-based power converter module for medium-voltage fast charger for plug-in electric vehicles [C]//2016 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016: 2714-2719. |
| [3] | 孙铭泽. 1200V碳化硅功率器件测试及建模 [D]. 湘潭大学, 2020. |
| [4] | 徐国林, 朱夏飞, 刘先正, 温家良, 赵志斌. 基于PSpice的碳化硅MOSFET的建模与仿真 [J]. 智能电网, 2015, 3 (06): 507-511. |
| [5] | 许明明, 王佳宁, 冯之健.基于SPICE模型的SiC MOSFET静动态特性分析 [J]. 电力电子技术, 2017, 51 (09): 28-30. |
| [6] | 候欣蓝. SiC MOSFET PSpice建模研究 [D]. 西安电子科技大学, 2020. |
| [7] | J. Martins, M. Nawaz, K. Ilves and F. Iannuzzo, "Development of PSpice modeling platform for 10 kV/100 A SiC MOSFET power module," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017, pp. 4358-4365. |
| [8] | 刘帆, 朱德文, 吴钫, 叶杰. SiC MOSFET建模及驱动电路设计 [J].电力电子技术, 2018, 52 (12): 133-136. |
| [9] | Millan J, Godignon P, Perpiñà X, et al. A survey of wide bandgap power semiconductor devices [J]. IEEE transactions on Power Electronics, 2013, 29 (5): 2155-2163. |
| [10] | L. Ceccarelli, F. Iannuzzo and M. Nawaz, "PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 2016, pp. 1-8. |
| [11] | 孙凯, 陆珏晶, 吴红飞, 邢岩, 黄立培.碳化硅MOSFET的变温度参数建模 [J]. 中国电机工程学报, 2013, 33 (03): 37-43+17. |
| [12] | H. Li, X. Zhao, K. Sun, Z. Zhao, G. Cao and T. Q. Zheng, "A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters, " in IEEE Transactions on Power Electronics, vol. 34, no. 5, pp. 4603-4612, May 2019. |
| [13] | K. Sun, H. Wu, J. Lu, Y. Xing and L. Huang, "Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range, " in IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2229-2237, May 2014. |
| [14] | 王文月. SiC MOSFET驱动电路研究与设计 [D]. 天津工业大学, 2021. |
| [15] | 赵星冉. 宽禁带半导体器件的PSpice电路建模与应用 [D]. 北京交通大学, 2019. |
| [16] | H. Li, X. Zhao, R. Hao and K. Sun, "A non-segmented PSpice model of SiC MOSFETs," IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017, pp. 4823-4828. |
| [17] | J. Wang et al., "Characterization, Modeling, and Application of 10-kV SiC MOSFET," in IEEE Transactions on Electron Devices, vol. 55, no.8, pp. 1798-1806, Aug. 2008. |
| [18] | 许明明. 宽禁带半导体器件的开关过程建模与分析 [D]. 合肥工业大学, 2018. |
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