Comparative Analysis of Positive Photoresist and Negative Photoresist in Nanoimprint Lithography Technology
School of Intelligent Manufacturing, Jilin Vocational College of Industry and Technology, Jilin 132013, China
| Abstract: | Nanoimprinting technology (NIL) has received widespread attention due to its high precision and high efficiency in the preparation of micro and nanostructures. The key to NIL lies in selecting photoresist materials, with positive and negative photoresists being the main choices. This article aims to comprehensively analyze the advantages and limitations of positive and negative photoresists in NIL, with a focus on performance comparison and scalability for large-scale production. By conducting in-depth research on their properties and applications, this study aims to provide new references for the selection criteria of photoresists in NIL processes. Both positive and negative photoresists have certain advantages and limitations in NIL. Positive photoresist has high resolution and low surface tension, making it suitable for preparing high-precision micro/nanostructures. However, the development process of photoresist is relatively complex, requiring the use of development solution and a longer development time. In addition, the adhesion of positive photoresist to negatively charged surfaces is poor, which may lead to mold detachment or damage. Negative photoresist has high contrast and short development time, making it suitable for large-scale production and high-throughput preparation. The development process of negative photoresist is relatively simple, requiring only the use of developing solution and a shorter development time. However, the resolution of negative photoresist is relatively low and not suitable for preparing high-precision micro/nanostructures. Meanwhile, the surface tension of negative photoresist is relatively high, which may cause the mold to detach or be damaged. This article selects suitable positive or negative photoresists based on their specific application requirements in terms of resolution, surface tension, complexity of development process, and production scale, in order to achieve the best microstructure preparation effect. |
| Keywords: | Positive Photoresist; Negative Photoresist; Nanoimprint Lithography; Mass Production |
| DOI: | 10.57237/j.mater.2024.04.002 |
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收稿日期: 2024-05-21
接受日期: 2024-08-24
在线出版日期: 2024-09-09
基金
| 1. | 2024 Jilin Provincial Department of Education Science Research Project "Preparation and Application of New Self heating Composite Nanoimprint Film" (project no. JJKH20241130KJ) |
| 2. | Jilin Vocational College of Industry and Technology's 2024 scientific research project "Research and Development of High Quality Semiconductor Chip Ion Doping Based on Thin Film Stripping Simulation Method" (Project Number: 24KY12KJY) |
参考文献
| [1] | Unno N, Mäkelä T. Thermal nanoimprint lithography—A review of the process, mold fabrication, and material [J]. Nanomaterials, 2023, 13(14): 2031. |
| [2] | Yang Zhiwei. Application Progress of Soft Film Nanoimprint Lithography Technology [J]. Science and Engineering, 2024, 3(2): 23-29. |
| [3] | Michael M. Editorial for Special Issue: Nanoimprint Lithography Technology and Applications [J]. Nanomaterials, 2021, 11(9): 2413-2413. |
| [4] | Dahee B, Hun S L, BongHyun J, et al. Lithography Technology for Micro- and Nanofabrication. [J]. Advances in experimental medicine and biology, 2021, 1309217-233. |
| [5] | Smolarczyk M, Jablonka L, Reuter S, et al. Self-aligned molding technology (SAMT) for fabrication of 3D structures with a foldable imprint mold [J]. Applied Nanoscience, 2019, 9(6): 1255-1263. |
| [6] | A. A K, I. D B, D. S B, et al. Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions [J]. High Energy Chemistry, 2023, 57(6): 498-503. |
| [7] | Gang Y, Qian X, Zhiyou L, et al. Novel polymeric platform produced by photodegradation-induced rearrangement for a multifunctional negative photoresist [J]. Polymers for Advanced Technologies, 2022, 34(2): 597-604. |
| [8] | Sreenivasan, S. V. "Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits." Microsystems & nanoengineering 3.1 (2017): 1-19. |
| [9] | Lan, Hongbo. "Large-area nanoimprint lithography and applications." Micro/Nanolithography-A heuristic aspect on the enduring technology (2018): 43-68. |
| [10] | Ahn, Seh-Won, et al. "Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography." Nanotechnology 16.9 (2005): 1874. |
| [11] | Zhang, Jie, et al. "Electrochemical nanoimprint lithography: when nanoimprint lithography meets metal assisted chemical etching." Nanoscale 9.22 (2017): 7476-7482. |
| [12] | Yan, X-M., et al. "Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography." Nano letters 5.4 (2005): 745-748. |
| [13] | Oh, Dong Kyo, et al. "Nanoimprint lithography for high-throughput fabrication of metasurfaces." Frontiers of Optoelectronics 14 (2021): 229-251. |
| [14] | Carlberg, Patrick, et al. "Lift-off process for nanoimprint lithography." Microelectronic engineering 67 (2003): 203-207. |
| [15] | Lee, JaeJong, et al. "Nano-scale patterning using the roll typed UV-nanoimprint lithography tool." Microelectronic Engineering 85.5-6 (2008): 861-865. |
| [16] | Wu, Dongxu, Nitul S Rajput, and **chun Luo. "Nanoimprint lithography-the past, the present and the future." Current Nanoscience 12.6 (2016): 712-724. |
| [17] | Dill, Frederick H., et al. "Characterization of positive photoresist." IEEE Transactions on electron devices 22.7 (1975): 445-452. |
| [18] | Guo, Min, et al. "Cross-Scale Topography Achieved by MOPL with Positive Photoresist to Regulate the Cell Behavior." Small 19.49 (2023): 2303572. |
| [19] | Luo, Chaoyun, et al. "Review of recent advances in inorganic photoresists." RSC advances 10.14 (2020): 8385-8395. |
| [20] | García-Fernández, Luis, Alexandre Specht, and Aránzazu Del Campo. "A Polyurethane-Based Positive Photoresist." Macromolecular rapid communications 35.20 (2014): 1801-1807. |
| [21] | Cao, Hong-Zhong, et al. "Two-photon nanolithography of positive photoresist thin film with ultrafast laser direct writing." Applied Physics Letters 102.20 (2013). |
| [22] | Shaw, Jane M., et al. "Negative photoresists for optical lithography." IBM journal of Research and Development 41.1.2 (1997): 81-94. |
| [23] | Lin, Dar-Jong, et al. "Preparation of a nanosilica-modified negative-type acrylate photoresist." Journal of applied polymer science 107.2 (2008): 1179-1188. |
| [24] | Tsuneishi, Asuka, Sachiyo Uchiyama, and Takahiro Kozawa. "Dissolution behavior of negative-type photoresists for display manufacture studied by quartz crystal microbalance method." Japanese Journal of Applied Physics 57.4 (2018): 046501. |
| [25] | Iwasa, Shigeyuki, et al. "Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography." Advances in Resist Technology and Processing XV. Vol. 3333. SPIE, 1998. |
| [26] | Zhang, Kui, et al. "GeTe photoresist films for both positive and negative heat-mode nanolithography." Materials Letters 261 (2020): 127019. |
| [27] | Yamada, Shintaro, et al. "Positive-and negative-tone water-processable photoresists: a progress report." Advances in Resist Technology and Processing XV. Vol. 3333. SPIE, 1998. |
