基于SiC MOSFET模型的开关特性研究
江苏理工学院, 电气信息工程学院, 江苏常州 213001
| 摘 要： | 随着电力电子技术的不断发展，以SiC、GaN为代表的第三代半导体材料，因其在禁带宽度、击穿电场、热导率、电子饱和速率等关键参数方面具有显著优势，满足了现代工业对高功率、高电压、高频率的需求。SiC MOSFET在发挥其高频优势时，随着开关频率的提高，在器件开通与关断过程中产生较大的电压变化率和电流变化率，并且在回路杂散参数影响下，电流电压尖峰振荡问题逐渐加重，严重时将会影响变换装置效率及开关频率的提升。论文主要研究分析SiC MOSFET器件特性，在厂商提供模型基础上修改模型，通过搭建静态和动态测试电路，观察模型静态特性曲线，并对比原模型与优化后模型在开关过程的漏极电压与电流波形。从结果中得出，优化后模型在开关时间上做了提升，并在开关振荡波形有很大改善；通过双脉冲电路验证优化后模型的准确性，并设置不同温度、驱动电阻条件下，研究观察漏源极电压与漏极电流开通关断情况，研究结果将为实际应用中对SiC MOSFET的开关特性改善提供数据支持。 |
| 关 键 词： | 碳化硅MOSFET; 电路仿真; 开关特性; LTspice |
| DOI： | 10.57237/j.se.2023.01.004 |
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收稿日期: 2022-11-27
接受日期: 2023-01-16
在线出版日期: 2023-02-03
Research on the Switching Characteristics Based on the SiC MOSFET Model
School of Electrical and Information Engineering, Jiangsu University of Technology, Changzhou 213001, China
| Abstract: | With the continuous development of power electronics technology, the third-generation semiconductor materials represented by SiC and GaN have significant advantages in the band gap width, breakdown electric field, thermal conductivity, electron saturation rate and other key parameters, which meet the needs of modern industry for high power, high voltage and high frequency. When the SiC MOSFET plays its high frequency advantage, with the increase of switching frequency, the voltage change rate and current change rate of the device will be larger in the process of turning on and off. This paper mainly analyzes the characteristics of SiC MOSFET devices, and modifies the model based on the model provided by the manufacturer. By establishing static and dynamic test circuits, the static characteristic curves of the model were observed, and the drain voltage and current waveforms of the original model and the optimized model were compared during the switching process. The results show that the switching time of the optimized model is improved, and the oscillation waveform is greatly improved. Then, the accuracy of the optimized model is verified by the double-pulse circuit, and the drain source voltage and the drain source current are studied and observed under different temperature and drive resistance conditions. This paper provides data support for improving the switching characteristics of SiC MOSFET in practical applications. |
| Keywords: | SiC MOSFET; Circuit Simulation; Switching Characteristic; LTspice |
基金
| 1. | 江苏省研究生实践创新计划项目《新能源汽车充电桩SiC MOSFET仿真及实验研究》 (SJCX22_1479). |
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